Preparation and Characterization of R.F. Magnetron Sputtered Mo:ZnO Thin Films. A paper in the Materials Science: An Indian Journal. @MaterialScien #materials #plasma

Figure 5: FIBSEM micrographs of Mo(1.5%):ZnO films deposited at a sputtering pressure of 1 × 10−2 mbar and at a substrate temperature of 473 K. I looked at publications in the Indian Journal. Material Science. Generally, papers on plasma processes were quite rare.  This is  one of the few interesting one using RF plasma sputtering.   The application was …

Continue reading Preparation and Characterization of R.F. Magnetron Sputtered Mo:ZnO Thin Films. A paper in the Materials Science: An Indian Journal. @MaterialScien #materials #plasma

Applying network analysis to plasma data. Graphing complex reactions. Learning from analysis of the internet scientist in the area of plasma physics have realized the importance of network graphing. #plasma #maths

Learning from analysis of the internet scientist in the area of plasma physics have realised the importance of network graphing.  These graphs outline the linear processes that can occur like the subway map of a line.  However when many competing paths exist the maps the maps can begin to look like the London underground. In …

Continue reading Applying network analysis to plasma data. Graphing complex reactions. Learning from analysis of the internet scientist in the area of plasma physics have realized the importance of network graphing. #plasma #maths

Tin vapor is the next big thing in light sources and an evolving new plasma application. These source produce light at the extreme end of the UV spectrum to make patterns at a few nano meters. #plasma #semiconductor

Discharge sources in tin vapor are receiving attention as a candidate for extreme ultraviolet light sources for application in semiconductor lithography, because of their favorable spectrum near 13.5 nm, which is 30 times smaller than the wavelength of visible light.  In an 2005 paper, the ASML EUV laboratory studied time-resolved pinhole imaging in the EUV …

Continue reading Tin vapor is the next big thing in light sources and an evolving new plasma application. These source produce light at the extreme end of the UV spectrum to make patterns at a few nano meters. #plasma #semiconductor

The Cold Plasma Market will be worth US$51.3Bn by 2026 and is predicted to expand at a CAGR of 16.3% between 2018 and 2026

Cold Plasma Market will Account for Revenues worth US$ 51314.6 Mn by 2026.  With the advancing electronics and semiconductors industry, the demand for cold plasma (CP) has been on the rise. While the demand for applications such as coating and finishing, surface treatment, adhesion, and etching, associated with printed circuit boards (PCBs) is soaring, the …

Continue reading The Cold Plasma Market will be worth US$51.3Bn by 2026 and is predicted to expand at a CAGR of 16.3% between 2018 and 2026

Mayor’s office of China’s Silicon Valley interrogates Irish High Technology Company.

The deputy district mayor of Shenzhen, Liu Zhiyong and a delegation from the Shenzhen Financial Development Office meeting the Management Team at Impedans Ltd. Deputy District Mayor, Liu Zhiyong, of Shenzhen also known as China’s Hardware Silicon Valley at a meeting today in Dublin, with Irish Technology Company Impedans Ltd.  The Deputy Mayor is chasing …

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16th International Conference on Plasma Surface Engineering

I look forward to attending the next PSE in Garmisch-Partenkirchen in southern Germany. It is a great conference for plasma treatment and given that Germany is one of the leading countries in plasma technology it is always exciting to attend.  The fact the beer is great is icing on the cake. Mike B Hopkins, Impedans  16th …

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Phase shifted harmonics for RF bias

An interesting paper from Thomas Mussenbrock's Lab using a phase shifted harmonic of the source bias in an inductive discharge to drive the bias electrode.  Their work shows that there is a synchronization of the bias field and inductive field that enhances power efficiency. It seems clear to me that the source power needs to …

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